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| AGR26045EF 45 W, 2.535 GHz--2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications, including multichannel multipoint distribution service (MMDS) for broadcasting and communications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Ri JC Value 1.5 Unit C/W Table 2. Absolute Maximum Ratings* Parameter Sym Value Drain-source Voltage VDSS 65 Gate-source Voltage VGS -0.5, +15 Total Dissipation at TC = 25 C PD 117 Derate Above 25 C -- 0.67 Operating Junction TemperaTJ 200 ture Storage Temperature Range TSTG -65, +150 Unit Vdc Vdc W W/C C C Figure 1. AGR26045EF (flanged) Package Features Typical performance for MMDS systems. f = 2600 MHz, IDQ = 430 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF*: -- Output power: 6.5 W. -- Power gain: 13 dB. -- Efficiency: 20% . -- ACPR: -34 dBc. -- ACLR1: -36 dBc. -- Return loss: -15 dB. Typical pulsed P1dB, 6 s pulse at 10% duty: 47 W. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 2600 MHz, 45 W continuous wave (CW) output power. Large signal impedance parameters available. *The test signal utilized is 4-channel W-CDMA Test Model 1. This test signal provides an equivalent reference (occupied bandwidth and waveform EPF) for the actual performance with an MMDS waveform. * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR26045EF HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR26045EF 45 W, 2.535 GHz--2.655 GHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Off Characteristics Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) = 200A Drain-source Breakdown Voltage (VGS = 0, ID = 50 A) Symbol V(BR)DSS IGSS IDSS GFS Min 65 -- -- -- -- -- -- Typ -- Max -- Unit Vdc Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.5 A) Gate Threshold Voltage (VDS = 10 V, ID = 150 A) Drain-source On-voltage (VGS = 10 V, ID = 0.5 A) Gate Quiescent Voltage (VDS = 28 V, ID = 430 mA) -- -- 2 75 5 -- Adc Adc S VGS(TH) VDS(ON) VGS(Q) 3.2 3.8 -- 4.8 -- -- Vdc 0.22 Vdc Vdc Table 5. RF Characteristics Parameter Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) Common-source Amplifier Power Gain* Drain Efficiency* Third-order Intermodulation Distortion* (IM3 distortion measured over 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz) Adjacent Channel Power Ratio* (ACPR measured over BW of 3.84 MHz @ f1 - 5 MHz and f2 + 5 MHz) Input Return Loss* Power Output, 1 dB Compression Point (VDD = 28 V, fC = 2655.0 MHz. CW) Symbol Dynamic Characteristics CRSS -- 1.0 -- pF Min Typ Max Unit Functional Tests (in Supplied Test Fixture) Agere Systems Supplied Test Fixture) GPS IM3 ACPR IRL -- -- -- 13 -38 -40 -15 -- 21 -- -- -- dB dBc dBc dB W % -- -- -- -- P1dB 43 -- Output Mismatch Stress (VDD = 28 V, POUT = 45 W (CW), IDQ = 430 mA, fC = 2655.0 MHz VSWR = 10:1; [all phase angles]) No degradation in output power. * 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2645 MHz, and f2 = 2655 MHz. VDD = 28 Vdc, IDQ = 430 mA, and POUT = 6.5 W avg. AGR26045EF 45 W, 2.535 GHz--2.655 GHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR26045EF FB1 VGG + C4 C3 Z1 RF INPUT C2 Z2 C1 Z3 Z7 Z4 Z8 Z5 Z6 R1 PINS: 1. DRAIN 2. GATE 3. SOURCE 2 1 3 VDD + Z10 Z9 C6 Z11 C7 C8 C5 C9 C10 Z12 C13 DUT C13 RF OUTPUT A. Schematic 2 3 1 Parts List: Microstrip line: Z1 0.496 in. x 0.066 in.; Z2 0.235 in. x 0.066 in.; Z3 0.200 in. x 0.090 in.; Z4 0.142 in. x 0.090 in.; Z5 0.215 in. x 0.090 in.; Z6 0.320 in. x 0.470 in.; Z7 0.410 in. x 0.050 in.; Z8 0.155 in. x 0.170 in.; Z9 0.470 in. x 0.330 in.; Z10 0.670 in. x 0.050 in.; Z11 0.530 in. x 0.066 in.; Z12 0.670 in. x 0.066 in. ATC (R) chip capacitor: C1, C2, C5, C6: 4.7 pF 100B47_J500; C11: 0.1 pF 100A0R1J_500; C12: 1.5 pF 100A15JW; C13 0.3 pF 100B0R3BW. Murata (R) 0805 capacitor: C8: 0.1 F. Vitramon (R) 1206 size capacitor C3, C7: 22000 pF. 1206 size chip resistor: R1; 12 . Fair-Rite (R) ferrite bead FB1: 2743018447. Kemet(R) capacitor: C4, C10: 22 F, 35 V; C9: 0.1 F 1206 case. Taconic(R) ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout Figure 2. AGR26045EF Component Layout AGR26045EF 45 W, 2.535 GHz--2.655 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics 0.0 > WA VELE N GTH S TOW A RD 0.0 0.49 0.48 170 U CT 0.6 Z0 = 25 IN D 90 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 180 D < 0.2 LOA OW A RD HST N GT -170 EL E AV W < -90 -160 0.49 0.1 0.4 0.48 o) jB/ Y E (NC 0.6 -85 1. 0 0.2 TA EP SC 7 0.4 6 0.4 4 0.0 0 -15 -80 IV CT IN DU 0.3 -75 R ,O o) 5 0.0 .45 -70 06 0. -65 0.6 -60 1.6 0.7 1.4 0.8 1.2 5 0.9 -5 1.0 0 -5 5 -4 MHz (f) 2500 (f1) 2550 (f2) 2600 (f3) 2650 (f4) 2700 (f5) ZS (complex source impedance) 13.4 - j9.0 12.8 - j9.3 12.2 - j9.5 11.6 - j9.6 11.1 - j9.7 GATE (2) ZS ZL (complex optimum load impedance) 7.2 - j7.1 6.7 - j7.1 6.2 - j6.5 5.7 - j5.9 5.4 - j5.4 DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances F 0. 32 0. 1.8 18 0 -5 -25 44 5 0. 0. 0.3 0.1 3 2. 0 7 -30 -60 0.3 0.1 4 6 -3 -70 5 0.35 0.15 0.36 0.14 -80 -4 0 0.37 0.13 0.4 0.2 -90 0.12 0.38 0.11 -100 0.39 CA P A 0.1 0.4 -110 CI T IVE RE AC TA N 0.0 0 9 .41 -12 CE CO M 0 0.0 PO N 0.4 8 2 EN T (-j -1 0. 40 0 4 Z X/ -15 4.0 -20 3. 0 0.8 ZL U ES 5.0 1. 0 f1 0.6 f5 -10 f5 0. 8 ZS f1 50 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 50 20 10 0. 8 0.4 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN DEG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM 10 0.1 -1 L E OF ANG 20 0.2 0.2 0.3 -4 0 50 D EGR EES -20 0.2 2 0.2 8 0.2 9 0.2 1 -30 0. 19 0. 31 0. 07 30 0. 43 AGR26045EF 45 W, 2.535 GHz--2.655 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 60 55 50 45 40 35 30 25 20 IRL GAIN PAE 20 15 10 5 0 -5 -10 -15 -20 GAIN (dB), IRL (dB) Z POWER (dBm), PAE (%) Z P1dB 2500 2550 2600 FREQUENCY, MHzZ 2650 2700 Figure 4. CW Broadband Performance -20 -25 -30 IMD3 (dBc) Z -35 -40 -45 -50 -55 -60 0.1 400 mA 350 mA 1 10 OUTPUT POW ER (W ) PEPZ 450 mA 500 mA 300 mA 100 Test conditions: Two-tone measurement @ 10 MHz tone spacing, VDD = 28 VDC, f1 = 2590 MHz, f2 = 2600 MHz. Figure 5. IMD3 vs. Output Power and IDQ AGR26045EF 45 W, 2.535 GHz--2.655 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) -20 -25 -30 -35 dBc X -40 -45 -50 -55 -60 -65 1 IM3 IM5 10 POUT (W , PEP)) Test conditions: Two-tone measurement @ 10 MHz tone spacing, VDD = 28 VDC, f1 = 2590 MHz, f2 = 2600 MHz. 45 40 35 30 25 20 15 10 IM7 5 100 0 Figure 6. Two-tone IMD vs. Power 0 -10 IMD (dBc) Z -20 -30 -40 -50 -60 0.1 1 IM3 IM5 IM7 10 100 TONE SPACING (MHz)Z Test conditions: VDD = 28 V, IDQ = 430 mA, POUT = 45 W (PEP), f = 2595 MHz. Figure 7. Two-tone IM3 vs. Tone Spacing AGR26045EF 45 W, 2.535 GHz--2.655 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 0 IMD, ACP (dBc) Z -10 -20 -30 -40 -50 -60 0 5 POUT (W )Z ACP 10 15 GAIN IMD PAE 30 PAE (%), GAIN (dB) Z 25 20 15 10 5 0 Test conditions: Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, f1 = 2590 MHz, f2 = 2600 MHz, VDD = 28 V, IDQ = 430 mA. Figure 8. Gain, Efficiency, ACP, and IMD vs. Power ACP, IMD (dBc); IRL (dB) Z -15 -20 -25 -30 -35 -40 -45 -50 2500 IRL GAIN 15 10 5 IMD ACP 2550 2600 2650 2700 0 FREQUENCY, MHzZ Test conditions: Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, POUT = 6.5 W, VDD = 28 V, IDQ = 430 mA. Figure 9. Two-Carrier W-CDMA Broadband Performance GAIN (dB), PAE (%) Z -10 -5 0 25 PAE 20 AGR26045EF 45 W, 2.535 GHz--2.655 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 0 | F1 | | F2 | -5 -1 0 -1 5 -2 0 -2 5 -3 0 -3 5 | IMD3 | | | ACP ACP | | | IMD3 | -4 0 -4 5 Ce nter 2.6 G Hz Sp an 50 M Hz Test conditions: Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, POUT = 6.5 W, VDD = 28 V, IDQ = 430 mA. Figure 10. Spectrum Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz--2.655 GHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. AGR26045EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES AGR26045XF AR G 21045F YYWWLL XXXXX Y W LL YW ZZZZZZZ ZZZZZZZ 1 3 3 2 2 Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. The last two letters of the part number denote wafer technology and package type. |
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